feature | Samsung V-NAND and Samsung Polaris controller, M.2 form factorFeatures: TRIM supported, S.M.A.R.T supported, auto garbage collection algorithm, AES 256-bit for user data encryption, TCG Opal, device sleep mode support: 5 mW (L1.2)Sequential Read: Up to 3,500mbps; Sequential Write: Up to 2100mbps; Random Read (4KB; QD32): Up to 330,000 IOPS(Thread 4); Random Write (4KB; QD32): Up to 330,000 IOPS (Thread 4); Random Read (4KB; QD1): Up to 14,000 IOPS (Thread 1); Random Write (4KB; QD1): Up to 50,00 |