| Brand | Samsung |
| Model | MZ-V6E1T0BW |
| Size | 1 TB |
| Manufacturer | Samsung |
| feature | Samsung V-NAND and Samsung Polaris controller, M.2 form factorFeatures: TRIM supported, S.M.A.R.T supported, auto garbage collection algorithm, AES 256-bit for user data encryption, TCG Opal, device sleep mode support: 5 mW (L1.2)Sequential Read: Up to 3,200mbps; Sequential Write: Up to 1,900mbps; Random Read (4KB; QD32): Up to 380,000 IOPS(Thread 4); Random Write (4KB; QD32): Up to 360,000 IOPS (Thread 4); Random Read (4KB; QD1): Up to 14,000 IOPS (Thread 1); Random Write (4KB; QD1): Up to 50,0 |
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